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"Gate of NMOS transistor in dynamic memory cell is connected to the" Multiple Choice Questions (MCQ) on random access memory cells with choices bit line, word line, dye line, and selected line to study online tutor courses. Practice dynamic memory cell quiz questions for jobs' assessment test and online courses for jobs' assessment test and online courses for undergraduate engineering schools.
MCQs on Random Access Memory Cells Quiz PDF Download eBook 4
MCQ: Gate of NMOS transistor in dynamic memory cell is connected to the
- word line
- bit line
- dye line
- selected line
A
MCQ: Refresh operation must be performed every
- 5 to 10ms
- 10 to 15ms
- 15 t0 20ms
- 20 to 25ms
A
MCQ: Most RAMs are of the
- non volatile type
- volatile type
- dynamic type
- static type
A
MCQ: Capacitor charge will leak off or dissipated due to
- leakage effect
- charge effect
- dynamic effect
- static effect
A
MCQ: RAM which is faster and more expensive is
- SRAM
- DRAM
- ERAM
- PRAM
A