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Random Access Memory Cells MCQ with Answers PDF Download eBook - 6

Random Access Memory Cells MCQ with answers PDF, random access memory cells quiz worksheets with answers key, digital electronics worksheets 6 for online engineering courses. Practice dynamic memory cell Multiple Choice Questions (MCQs), Random Access Memory Cells quiz with answers for admission and merit scholarships test. Learn dynamic memory cell, static memory cell, random access memory cell types, dynamic memory cell amplifier career test for best online colleges with financial aid.

"Interval required to refresh the entire chip is typically less than" Multiple Choice Questions (MCQ) on random access memory cells with choices 2%, 1%, 10%, and 30% for online degree programs. Practice dynamic memory cell quiz questions for jobs' assessment test and online courses for jobs' assessment test and online courses for undergraduate engineering schools.

MCQs on Random Access Memory Cells PDF Download eBook 6

MCQ: Interval required to refresh the entire chip is typically less than

  1. 1%
  2. 2%
  3. 10%
  4. 30%

B

MCQ: To write operation in static memory cell, small capacitance needs to be

  1. charge
  2. discharge
  3. breakdown

A

MCQ: Dynamic memory cell consist of

  1. two NMOS
  2. two PMOS
  3. one NMOS
  4. one PMOS

C

MCQ: RAM which requires periodic refreshing to regenerate data is

  1. SRAM
  2. DRAM
  3. ERAM
  4. PRAM

B

MCQ: The change of voltage on the bit line is detected by the

  1. column sense amplifier
  2. row sense amplifier
  3. straight sense amplifier
  4. diagonal sense amplifier

A