Integrated Circuits Practice Test 53
Logic Circuit Characterization Quiz Questions and Answers PDF - 53
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The Logic Circuit Characterization Quiz Questions and Answers PDF Download (Logic Circuit Characterization Quiz with Answers PDF e-Book) Ch. 2-53 to study integrated circuits online courses. Practice MOSFETs MCQ Questions PDF, logic circuit characterization Multiple Choice Questions (MCQ Quiz) for online college degrees. The Logic Circuit Characterization Quiz App: Download free learning app for cmos technology, carrier drift, logic circuit characterization test prep for undergraduate engineering schools.
The Quiz: Delay power product 'DP' is defined as; "Logic Circuit Characterization" App Download (Free) with answers ‘PDtP’, ‘PDt’, ‘PD+tP’ and ‘pd/tp’ for online engineering schools. Solve mosfets questions and answers, Amazon eBook to download free sample for job placement test.
Logic Circuit Characterization Questions and Answers PDF Download: Quiz 53
MCQ 261: Delay power product 'DP' is defined as
- PDt
- PDtP
- PD+tP
- PD/tP
MCQ 262: Charge particles within a semiconductor move with an average velocity proportional to the electric field. This proportionality constant is termed as
- motility
- mobility
- static
- drift
MCQ 263: A design methodology in combinatory logic circuits, particularly those implemented in MOS technology is termed as
- dynamic CMOS logic
- static CMOS logic
- temporary CMOS logic
- none of above
MCQ 264: IF 5V supply is applied at load capacitance of 2C with switching frequency of 0.5Hz than dynamic power will be
- 5.5watt
- 15watt
- 10.5watt
- 25watt
MCQ 265: Jack Kilby was awarded the Nobel Prize in Physics for his contribution in the invention of the
- invention circuit
- integrated circuit
- transistor
- resistor
Mock Tests: Electronic Devices Course Prep
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Electronic Devices Quiz with Answers
- In forward bias, negative terminal of source is connected to diode's negative terminal referred to as
- Effective flow of holes from one place to another is termed as
- In n=AT2e[-EG/k], EG is energy gap at temperature of
- Process of losing Valence electrons in an atom is called
- In PIN diode, low forward resistance of intrinsic region decreases when current
- If a certain amplifier has DC drain resistance of 1.0k Ω where
Logic Circuit Characterization Quiz Book Questions
- In BSIM4, gate oxide thickness is scaled down to
- Flip flop/latch is the basic storage element in
- Metal contacts are also made to source, drain and substrate region called
- Delay which is equal to the time taken by a gate output
- When sufficient number of electrons accumulate near the surface of the substrate
- Boron and Aluminum has valance electrons of number