Integrated Circuits Practice Test 17
Structure and Physical Operation Quiz Questions and Answers PDF - 17
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Structure & Physical Operation Questions and Answers PDF Download: Quiz 17
MCQ 81: Insulated-gate FET is abbreviated as
- IFET
- IGFET
- IGMOSFET
- IGMOS
MCQ 82: 180nm process has transistors up to
- 10 million
- 42 million
- 125 million
- 5 million
MCQ 83: On the top of silicon dioxide (SiO2), material deposited is of
- non metal
- metal
- insulator
- photoconductor
MCQ 84: Both NMOS and PMOS transistors have a gate-source threshold voltage, below which the current through the device drops
- linearly
- constantly
- exponentially
- step response
MCQ 85: A high voltage on the gates will cause the n-MOSFET to
- not conduct
- conduct
- ground
- none of above
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Electronic Devices Practice Questions
Electronic Devices Quiz with Answers
- If internal emitter resistance of BJT is 20 Ω and collector resistor
- D-MOSFET can operate in
- Process in which electron falls into a hole is termed as
- Load regulation means that output voltage is constant over range of
- If biasing voltage is 10 V, R=1.0kΩ and internal resistance is 10Ω
- Rectifier which results an output with a frequency twice the input frequency