Chapter 11: Electronic Devices Exam Tests
Electronic Devices MCQs - Chapter 11
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MCQ 16: If a block of Si is doped with a trivalent impurity atoms and other part with pentavalent impurity, a boundary is formed between n and p type, called
MCQ 17: Barrier potential for Si at 25°C is
MCQ 18: As depletion region widens in reverse biased condition, availability of majority charge carriers
MCQ 19: For a complete diode model, including internal resistance, forward current will be
MCQ 20: Reverse bias prevent current as long as reverse voltage doesn't exceed the
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