Chapter 12: Digital Electronics Exam Tests
Digital Electronics MCQs - Chapter 12
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MCQ 36: Top layer of MESFET is built on
MCQ 37: In pull down transistor, output is pulled down to
MCQ 38: If diode level shifting network of FL inverter is connected at input side of gate it is called
MCQ 39: Source follower transistor in BFL increases the capability of
MCQ 40: MESFETs are usually constructed in compound semiconductor technologies lacking passivation of
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