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Finite Difference Time Domain Method Multiple Choice Questions (MCQ) PDF Download
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The MCQ: Oliveira and Sobrinho applied the FDTD method for simulating lightning strokes in a power substation in; "Finite Difference Time Domain Method" App Download (Free) with answers 2006, 2007, 2008 and 2009 to study online classes courses. Study finite difference time domain method quiz questions, download Google e-Book (Free Sample) for job placement test.
Finite Difference Time Domain Method MCQs: Questions and Answers PDF Download
MCQ : Oliveira and Sobrinho applied the FDTD method for simulating lightning strokes in a power substation in
- 2006
- 2007
- 2008
- 2009
MCQ 1: Gwarek introduced the lumped equivalent circuit formulation of FDTD in
- 1955
- 1965
- 1975
- 1985
MCQ 2: DeRaedt introduced the unconditionally stable, ?one-step? FDTD technique in
- 2001
- 2002
- 2003
- 2004
MCQ 3: FDTD modeling of lumped electronic circuit elements was introduced by Sui et al in
- 1990
- 1991
- 1992
- 1993
MCQ 4: Holland and Kunz & Lee applied Yee?s algorithm to EMP problems in
- 1966
- 1977
- 1988
- 1999
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Electronic Devices Practice Questions
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Electronic Devices MCQ Questions
- The breakdown region can be set during manufacturing by carefully controlling the
- Device which is used to couple the AC input from source to rectifier is
- JFET forward transconductance is expressed as a ratio and has the unit of
- Which of the following diodes are used in very high frequencies?
- A small voltage drop occurs across the pn region due to internal
- Process in whichconductivity of semiconductor can be drastically increase by adding controlled
Finite Difference Time Domain Method MCQs Book Questions
- Oliveira and Sobrinho applied the FDTD method for simulating lightning strokes in a power substation in
- Device which is used to couple the AC input from source to rectifier is
- JFET forward transconductance is expressed as a ratio and has the unit of
- Which of the following diodes are used in very high frequencies?
- A small voltage drop occurs across the pn region due to internal
- Process in whichconductivity of semiconductor can be drastically increase by adding controlled