FGMOS Basics MCQs Quiz Online PDF Download

Learn fgmos basics MCQs, digital electronics MCQ test for online learning. Read only memory rom quiz has multiple choice questions (MCQ), fgmos basics quiz questions and answers to practice as usually fowler-nordheim tunneling and hot-carrier injection mechanisms are used to modify amount of charge stored in the, answer key help with choices as floating gate, select gate, bit gate and dye gate problem solving for viva, competitive exam preparation, interview questions. Free study guide is for online learning fgmos basics quiz with MCQs to practice test questions with answers.

MCQs on FGMOS Basics Quiz PDF Download

MCQ. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the

  1. floating gate
  2. select gate
  3. bit gate
  4. dye gate

A

MCQ. In 1989,Intel employed the FGMOS as an

  1. digital volatile memory element
  2. analog volatile memory element
  3. digital non-volatile memory element
  4. analog non-volatile memory element

D

MCQ. An FGMOS can be fabricated by electrically isolating the gate of a standard MOS transistor, so that there is no gate

  1. resistive connection
  2. inductive connection
  3. capacitance connection
  4. transitive connection

A

MCQ. Memory cell made up of FGMOS is called

  1. stacked gate cell
  2. unstacked gate cell
  3. tramp gate cell
  4. stramp gate cell

A

MCQ. Floating gate transistor based ROM is consist of arrays which are of number of

  1. stacked gate cell
  2. unstacked gate cell
  3. tramp gate cell
  4. stramp gate cell

A